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Relation between the leakage currents and the defects created in the oxide and at the interface in a short channel NMOS transistor

✍ Scribed by A. Bouhdada; S. Bakkali; A. Nouaçry; A. Touhami

Book ID: 104157749
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 478 KB
Volume: 28
Category: Article
ISSN: 0026-2692
DOI: 10.1016/s0026-2692(96)00046-8

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