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Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP

✍ Scribed by A. Catana; R.F. Broom; R. Germann; P. Roentgen


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
427 KB
Volume
129
Category
Article
ISSN
0022-0248

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A Raman study of the strain in InP/GaAs
✍ S. Gennari; P.P. Lottici; F. RiccΓ² πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 145 KB

A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to \(280 \mathrm{~nm}\), is reported. The InP LO phonon shows an increasing frequency blueshift with decreasing layer thickn