We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (%20 nm) in-situ during layer growth. The doping contributes to three features in the RAS spectra: an oscillation at 0 and an offset of the baseline of the whole
โฆ LIBER โฆ
Reflectance modulation in Ge and GaAs by optical carrier injection
โ Scribed by N.G. Nilsson
- Publisher
- Elsevier Science
- Year
- 1969
- Tongue
- English
- Weight
- 264 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0038-1098
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