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Reflectance anisotropy from (001) GaAs surfaces during pseudo-ALE growth of GaAs

✍ Scribed by S.R. Armstrong; R.D. Hoare; I.M. Povey; M.E. Pemble; A. Stafford; A.G. Taylor; D.R. Klug


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
541 KB
Volume
69
Category
Article
ISSN
0169-4332

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The method of reflectance anisotropy spectroscopy (RAS) has proved extremely useful in monitoring the structure of semiconductor surfaces during growth under metal-organic vapour phase epitaxy conditions. Similarly, scanning tunnelling microscopy (STM) has proved invaluable in providing information