The ionic and electronic conductivities of polycrystalline indium and gallium p-alurninas were measured. The conductivities were measured using @arising electrodes with nc frequency analysis which was also used to determine the relative contributions of bulk and grain boundary conductivity to the co
Refining of gallium using gallium beta-alumina
β Scribed by R. Gee; D.J. Fray
- Publisher
- Elsevier Science
- Year
- 1979
- Tongue
- English
- Weight
- 340 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0013-4686
No coin nor oath required. For personal study only.
β¦ Synopsis
The preparation of polycrystalline gallium beta-alumina samples using molten gallium and gallium diihloride is described. Gallium was selectively electrochemically transferred through a gallium beta alumina membrane from a gallium tin alloy.
INTRODUCrlON
Gallium is used extensively by the electronics industry for the preparation of gallium arsenide and phosphide light emitting diodes and solar cells. For these applications, the gallium must be of extremely high purity, with most elements well below the 1 ppm level. This is usually achieved by repeated electrolysis at low current densities in an aqueous potassium gallate solution followed by vacuum baking and zone refining. The preparation of slivers of single crystal arsenide and phosphide produces a significant proportion of reject@ material from which the gallium can be reclaimed and re6ned. Using existing technology, the cost of r&ning gallium is high and there is scope for an alternative method.
In recent years, there has been considerable research
π SIMILAR VOLUMES