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Reentrant quantum Hall effect in bilayer system at high filling factors

✍ Scribed by G.M. Gusev; A.K. Bakarov; T.E. Lamas; J.C. Portal

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 390 KB
Volume: 40
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2007.09.207

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✦ Synopsis

We report on the measurements of the quantum Hall effect states in double quantum well structures at the filling factors n ¼ 4N þ 1 and 4N þ 3, where N is the Landau index number, in the presence of the in-plane magnetic field. The quantum Hall states at these filling factors vanish and reappear several times. Repeated reentrance of the transport gap occurs due to the periodic vanishing of the tunneling amplitude in the presence of the in-plane field. When the gap vanishes, the transport becomes anisotropic. The anisotropy persist at halfodd filling factors, when bilayer quantum Hall states are recovered with increase of the tilt angle.

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