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Reduction of the temperature dependence of the channel resistance in a MOS transistor

โœ Scribed by A. A. Redkokasha


Publisher
Springer US
Year
1979
Tongue
English
Weight
215 KB
Volume
22
Category
Article
ISSN
0543-1972

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Explicit geometry dependence of MOS tran
โœ Sudhir M. Gowda; Bing J. Sheu ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Springer ๐ŸŒ English โš– 726 KB

The pseudoboundary method is an engineering technique to extend the use of a single parameter set over the entire geometric design space for VLSI circuits. The technique eliminates adverse effects, such as negative output conductance, by clamping the evaluation of geometric dependence terms at the s