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Reduction of the internal electric field in GaN/AlN quantum dots grown on the a -plane of SiC substrates

✍ Scribed by N. Garro; A. Cros; J. A. Budagosky; A. Cantarero; A. Vinattieri; M. Gurioli; S. Founta; H. Mariette; B. Daudin

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
215 KB
Volume
2
Category
Article
ISSN
1862-6351

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