๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Reduction of Ionization Rate Ratio in Doped-Barrier GaAs/AlGaAs Multi-Quantum Well Structure

โœ Scribed by Toivonen, M. A.


Book ID
105383402
Publisher
John Wiley and Sons
Year
1992
Tongue
English
Weight
188 KB
Volume
133
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Reduction in relaxation time due to ioni
โœ J.H. Park; S. Senzaki; N. Mori; C. Hamaguchi ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 117 KB

Time-resolved photoluminescence measurements in ฮด-doped GaAs/AlGaAs on the quantum well structures are performed to study effects of ionized impurities relaxation process of photoexcited carriers. It is theoretically shown that a thin quantum well with a ฮด-doping layer inserted in the barrier layer