Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

✍ Scribed by Mazzucato, S; Boonpeng, P; Carrère, H; Lagarde, D; Arnoult, A; Lacoste, G; Zhang, T; Balocchi, A; Amand, T; Marie, X; Fontaine, C

• Book ID: 120648667
• Publisher: Institute of Physics
• Year: 2013
• Tongue: English
• Weight: 559 KB
• Volume: 28
• Category: Article
• ISSN: 0268-1242
• DOI: 10.1088/0268-1242/28/2/022001