Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates

✍ Scribed by Dang-Hui, Wang; Yue, Hao; Sheng-Rui, Xu; Tian-Han, Xu; Dang-Chao, Wang; Ting-Zhen, Yao; Ya-Ni, Zhang

• Book ID: 123355786
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 706 KB
• Volume: 555
• Category: Article
• ISSN: 0925-8388
• DOI: 10.1016/j.jallcom.2012.12.018