Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs

✍ Scribed by Ho-Young Cha; Thomas, C.I.; Koley, G.; Eastman, L.F.; Spencer, M.G.

• Book ID: 114617159
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 666 KB
• Volume: 50
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2003.814982