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Reduced defect density in silicon-on-insulator structures formed by oxygen implantation in two steps

โœ Scribed by Margail, J.; Stoemenos, J.; Jaussaud, C.; Bruel, M.


Book ID
120210930
Publisher
American Institute of Physics
Year
1989
Tongue
English
Weight
727 KB
Volume
54
Category
Article
ISSN
0003-6951

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Arsenic ions were implanted into silicon-on-insulator (SOl) structures at an incident energy of 100 keV to a dose of 2 x 10 lscm-z. Conductive top layers were formed in the SOl structures after annealing at 1200 ~ for 20 s. Infrared reflection spectra in the wave number range of 1500-5000 cm -1 were