Optical effects of doped top layers in s
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Yu Yuehui; Lin Chenglu; Zou Shichang
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Article
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1995
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Springer
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English
โ 338 KB
Arsenic ions were implanted into silicon-on-insulator (SOl) structures at an incident energy of 100 keV to a dose of 2 x 10 lscm-z. Conductive top layers were formed in the SOl structures after annealing at 1200 ~ for 20 s. Infrared reflection spectra in the wave number range of 1500-5000 cm -1 were