Recombination processes at grain boundaries in polycrystalline semiconductors
✍ Scribed by Šamaj, L.
- Publisher
- John Wiley and Sons
- Year
- 1987
- Tongue
- English
- Weight
- 601 KB
- Volume
- 100
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The cracking of grain boundary facets in polycrystalline materials showing anisotropic thermal expansion behaviour is controlled by several microstructural factors in addition to the intrinsic thermal and elastic properties. Of specific interest are the relative orientation of the two grains meeting
The effective minority carrier lifetime in polycrystalline semiconductors is determined in terms of the grain size and the recombination velocity at the grain boundaries. The effect of the grain boundaries is to reduce the effective lifetime when the grain size is smaller than few diffusion lengths.