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Recombination processes at grain boundaries in polycrystalline semiconductors

✍ Scribed by Šamaj, L.


Publisher
John Wiley and Sons
Year
1987
Tongue
English
Weight
601 KB
Volume
100
Category
Article
ISSN
0031-8965

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Cracking at grain boundaries in polycrys
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The cracking of grain boundary facets in polycrystalline materials showing anisotropic thermal expansion behaviour is controlled by several microstructural factors in addition to the intrinsic thermal and elastic properties. Of specific interest are the relative orientation of the two grains meeting

Influence of grain boundary recombinatio
✍ C.A. Dimitriadis 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 215 KB

The effective minority carrier lifetime in polycrystalline semiconductors is determined in terms of the grain size and the recombination velocity at the grain boundaries. The effect of the grain boundaries is to reduce the effective lifetime when the grain size is smaller than few diffusion lengths.