✦ LIBER ✦

Recombination efficiency of single dislocations in GaP

✍ Scribed by C.A. Dimitriadis

Publisher: Elsevier Science
Year: 1984
Tongue: English
Weight: 140 KB
Volume: 49
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(84)91041-x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

SEM cathodoluminescence studies of dislo

SEM cathodoluminescence studies of dislocation recombination in GaP

✍ C.A. Dimitriadis; E. Huang; S.M. Davidson 📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 434 KB

Recombination Activity of Misfit Disloca

Recombination Activity of Misfit Dislocations in Silicon

✍ Kittler, M. ;Seifert, W. ;Higgs, V. 📂 Article 📅 1993 🏛 John Wiley and Sons 🌐 English ⚖ 541 KB

Recombination of charge carriers at disl

Recombination of charge carriers at dislocations in germanium

✍ Schröter, W. 📂 Article 📅 1973 🏛 John Wiley and Sons 🌐 English ⚖ 786 KB

Theory of Carrier Recombination at Dislo

Theory of Carrier Recombination at Dislocations in Germanium

✍ T. Figielski 📂 Article 📅 1964 🏛 John Wiley and Sons 🌐 English ⚖ 674 KB

Magnitudes of dislocations in gypsum sin

Magnitudes of dislocations in gypsum single crystals

✍ Dr. K. S. Raju 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 193 KB 👁 1 views

Study of dislocations in CdZnTe single c

Study of dislocations in CdZnTe single crystals

✍ Zha, Gangqiang ;Jie, Wanqi ;Tan, Tingting ;Wang, Linghang 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 188 KB

## Abstract Experimental studies have been conducted to investigate the influence of dislocations on the properties of CdZnTe crystals. Dislocations were introduced into CdZnTe wafers by means of bending deformation at elevated temperature. The average infrared (IR) transmittance of CdZnTe wafers a