Recombination dynamics in strained In1-xGaxAs/InP-quantum well structures

✍ Scribed by A. Hoffmann; H. Siegle; L. Eckey; B. Lummer; P. Thurian; R. Heitz; B.K. Meyer; C. Wetzel; D.M. Hofmann; V. Härle; F. Scholz; A. Kohl

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 200 KB
• Volume: 15
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1994.1058

✦ Synopsis

We present a comprehensive study of the excitonic recombination lifetime in strained and unstrained (\mathrm{In}{1-\mathrm{x}} \mathrm{Ga}{\mathrm{x}} \mathrm{A} / \mathrm{InP})-quantum well structures as a function of well width and Ga mole fraction. In the lattice-matched case a minimum lifetime of (650 \mathrm{ps}) is observed for a well thickness of (2 \mathrm{~nm}). For widths larger as well as smaller than (2 \mathrm{~nm}) the lifetime increases. In strained (\operatorname{In}{1-x} \mathrm{Ga}{x} \mathrm{~A} / \mathrm{InP}) quantum wells the recombination lifetime shows a strong dependence on the Ga content. While the lifetime is nearly constant in the compressively strained case ( (\mathrm{x}{\mathrm{G}{2}}<0.47) ), we observe a drastic increase with rising (\mathrm{Ga}) content for tensile strain (\left(\mathrm{x}{\mathrm{G}{2}}>0.47\right)).