Recombination dynamics in piezoelectric (211)B InAs quantum dots
β Scribed by Germanis, S.; Beveratos, A.; Gauthron, K.; Stavrinidis, A.; Konstantinidis, G.; Hatzopoulos, Z.; Pelekanos, N.T.
- Book ID
- 122705782
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 918 KB
- Volume
- 112
- Category
- Article
- ISSN
- 0167-9317
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π SIMILAR VOLUMES
InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) grown on GaAs (100), (211)B and (311)B substrates by molecular beam epitaxy at different growth temperatures (ΒΉ ) have been investigated. QDs were observed after deposition of 2ML (or 4ML ) of InAs on GaAs (100) (or (311)B) at ΒΉ rangin
## Abstract Timeβresolved photoluminescence experiments in high quality InAs/GaAs quantum dots clearly show the interplay between radiative recombination and thermalization processes. In particular from temperature dependent PL spectra, we prove that the carrier recombination dynamics is ruled by t