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Recombination and intraband radiation in gallium phosphide light-emitting diodes

✍ Scribed by V. V. Guts; I. V. Solonchuk

Publisher
Springer US
Year
1984
Tongue
English
Weight
244 KB
Volume
41
Category
Article
ISSN
0021-9037

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## Abstract Nitride laser diodes and light emitting diodes were irradiated with 200‐, 80‐ and 10‐MeV protons. The threshold current of violet laser diodes increased with increasing proton fluence to 1 Γ— 10^14^ p/cm^2^. The increase in threshold current is considerably small compared with that of Al