Properties of Quantum Well Excitons in G
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Chichibu, S. F. ;Deguchi, T. ;Sota, T. ;Wada, K. ;DenBaars, S. P. ;Mukai, T. ;Na
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Article
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1999
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John Wiley and Sons
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English
⚖ 195 KB
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Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well