Recombination activity of “clean” and co
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M. Kittler; C. Ulhaq-Bouillet; V. Higgs
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Article
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1994
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Elsevier Science
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English
⚖ 550 KB
The recombination at misfit dislocations in Si(Ge) structures was studied by the technique of electron-beam-induced current. The contrast temperature dependence was interpreted using the Schokley-Read-Hall recombination theory. Different situations were observed: either a dominance of shallow centre