Recoiled-oxygen-free processing for 1.5 nm SiON gate-dielectric in sub-100-nm CMOS technology

✍ Scribed by Togo, M.; Kimura, S.; Mogami, T.

• Book ID: 114616766
• Publisher: IEEE
• Year: 2002
• Tongue: English
• Weight: 276 KB
• Volume: 49
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2002.1013272