✦ LIBER ✦
Examination and evaluation of La2O3 as gate dielectric for sub-100 nm CMOS and DRAM technology
✍ Scribed by V. Capodieci; F. Wiest; T. Sulima; J. Schulze; I. Eisele
- Book ID
- 108210526
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 193 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0026-2714
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