We reviewed our recent progress in growth and optical properties of GaN-based quantum dots (QDs). After briefly discussing the impact of GaN-based QDs on the improvement of threshold current characteristics, we show the growth of InGaN/GaN self-assembled QDs with the average diameter of the QDs as s
Recent progress in growth and physics of GaN/AlN quantum dots
✍ Scribed by N. Gogneau; F. Enjalbert; F. Fossard; Y. Hori ; C. Adelmann; J. Brault; E. Martinez-Guerrero; J. Simon; E. Bellet-Amalric; D. Jalabert; N. Pelekanos; J.-L. Rouvière; B. Daudin; Le Si Dang; H. Mariette; E. Monroy
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 337 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1862-6351
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