Recent advances are presented in the models for thermal oxidation that have been been introduced by Rao and co-workers. The level-set formulation for movement of the Si-SiO 2 interface has been improved by the application of an efficient velocityprojection scheme for noninterface points. A penalty f
โฆ LIBER โฆ
Recent Advances in Machining of Silicon Wafers for Semiconductor Applications
โ Scribed by P.S. Sreejith; G. Udupa; Y.B.M. Noor; B.K.A. Ngoi
- Publisher
- Springer
- Year
- 2001
- Tongue
- English
- Weight
- 130 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0268-3768
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