Real-time monitoring of Si1–xGex heteroepitaxial growth using laser light scattering and spectroscopic ellipsometry

Analysis of Si1-xGex:H thin films with g

Analysis of Si1-xGex:H thin films with graded composition and structure by real time spectroscopic ellipsometry

✍ Podraza, N. J. ;Li, Jing ;Wronski, C. R. ;Dickey, E. C. ;Horn, M. W. ;Collins, R 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 378 KB

## Abstract Silicon‐germanium (Si~1−__x__~ Ge__~x~__:H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH~4~ and GeH~4~ and measured during growth using real time spectroscopic ellipsometry. A two‐layer virtual interface analysis has been applied to study the structu