Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

✍ Scribed by Yasufumi Fujiwara; Yoichi Nonogaki; Ryo Oga; Atsushi Koizumi; Yoshikazu Takeda

• Book ID: 108418126
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 146 KB
• Volume: 216
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(03)00515-4