Reactive ion beam mixing of V/Si interfaces by low energy bombardment
β Scribed by C. Palacio; A. Arranz
- Book ID
- 118501327
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 270 KB
- Volume
- 602
- Category
- Article
- ISSN
- 0039-6028
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## Abstract An Xβray Si __L__~2,3~βemission spectroscopy study of a SiO~2~/nβSi heterostructure containing a thin oxide layer of __d__β=β20βnm thickness implanted by Si^+^ ions with an energy 12βkeV is reported. The maximum concentration of implanted Si^+^ ions is located close to the SiO~2~βSi int