𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Reaction of trimethylphosphate with TiC and VC(1 0 0) surfaces

✍ Scribed by Hyun I. Kim; Peter Frantz; Stephen V. Didziulis; Luis C. Fernandez-Torres; Scott S. Perry


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
297 KB
Volume
543
Category
Article
ISSN
0039-6028

No coin nor oath required. For personal study only.

✦ Synopsis


We have investigated trimethylphosphate [(CH 3 O) 3 PO] (TMP) chemistry on the TiC(1 0 0) and VC(1 0 0) surfaces as a function of temperature to understand the adsorption and reaction of this model lubricant additive on hard ceramic materials. High resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS), and temperature programmed desorption (TPD) have been used to determine that TMP adsorbs molecularly on both surfaces at low temperature. At room temperature and above, the molecule decomposes on TiC, forming strong Ti-O-P chemical bonds while breaking C-O bonds in the process. The reaction products that persist on the surface after heating up to 873 K are determined to be phosphate-like (PO x ) and carbonaceous species. This reaction, however, has been determined to be influenced by the initial coverage of molecular TMP at the cryogenic dosing temperature; when the monolayer coverage was substantially lower, phosphate-like species were chemically reduced at high temperature. Identical experiments on VC(1 0 0) indicated much less decomposition of TMP, even with large exposures, and the presence of a chemically reduced form of phosphorous and -O-C species on the surface at high temperatures.


πŸ“œ SIMILAR VOLUMES


Half-metallicity characteristic at zincb
✍ F. Ahmadian; M.R. Abolhassani; M. Ghoranneviss; M. Elahi πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 546 KB

Electronic and magnetic properties of the zincblende CrSb(0 0 1) surfaces and its interfaces with GaSb(0 0 1) and InAs(0 0 1) semiconductors are studied within the framework of the density-functional theory using the FPLAPW+lo approach. We found that the Cr-terminated surfaces retain the halfmetalli

Origins of GaN(0 0 0 1) s
✍ S VΓ©zian; F Semond; J Massies; D.W Bullock; Z Ding; P.M Thibado πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 448 KB

The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Various reconstructions are o