Surface modification of InGaAs/GaAs hete
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S. Dhamodaran; A.P. Pathak; D.K. Avasthi; T. Srinivasan; R. Muralidharan; D. Emf
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Article
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2007
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Elsevier Science
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English
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We investigate the surface morphology of molecular beam epitaxy (MBE) grown InGaAs/GaAs(0 0 1) heterostructures using atomic force microscope (AFM) before and after irradiation. Samples with layer thicknesses below critical layer thickness (i.e. fully strained) have smooth surface where as, the samp