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RBS/channeling studies of swift heavy ion irradiated InGaAs/GaAs heterostructures

โœ Scribed by S. Dhamodaran; N. Sathish; A.P. Pathak; S.A. Khan; D.K. Avasthi; T. Srinivasan; R. Muralidharan; B. Sundaravel; K.G.M. Nair


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
184 KB
Volume
244
Category
Article
ISSN
0168-583X

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Surface modification of InGaAs/GaAs hete
โœ S. Dhamodaran; A.P. Pathak; D.K. Avasthi; T. Srinivasan; R. Muralidharan; D. Emf ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 1005 KB

We investigate the surface morphology of molecular beam epitaxy (MBE) grown InGaAs/GaAs(0 0 1) heterostructures using atomic force microscope (AFM) before and after irradiation. Samples with layer thicknesses below critical layer thickness (i.e. fully strained) have smooth surface where as, the samp