RBS-channeling determination of damage profiles in fully relaxed Si0.76Ge0.24 implanted with 2 MeV Si ions

✍ Scribed by M. Bianconi; G. Lulli; F. Spallacci; E. Albertazzi; R. Nipoti; A. Carnera; C. Cellini

• Book ID: 114168680
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 807 KB
• Volume: 122
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/s0168-583x(96)00788-4