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Rapid thermal annealing induced changes on the contact of Ni/Au to N-doped ZnO

✍ Scribed by Z.P. Shan; S.L. Gu; S.M. Zhu; W. Liu; K. Tang; H. Chen; J.G. Liu; Y.D. Zheng

Book ID: 108060611
Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 654 KB
Volume: 254
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.05.118

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## Abstract The effects of rapid thermal annealing on the electrical and structural properties of Pd/Au Schottky contacts to n‐type InP(111) have been investigated by current–voltage (__I__ –__V__), capacitance–voltage (__C__ –__V__) and X‐ray diffraction (XRD) measurements. The barrier height of t