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Rapid thermal anneal in InP, GaAs and GaAs/GaAlAs

✍ Scribed by B. Descouts; N. Duhamel; S. Godefroy; P. Krauz

Book ID
114168113
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
345 KB
Volume
19-20
Category
Article
ISSN
0168-583X

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Deep levels in rapid thermal annealed Ga
Deep levels in rapid thermal annealed GaAs
✍ P. KamiΕ„ski; G. Gawlik; R. KozΕ‚owski πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 398 KB

The effect of rapid thermal annealing conditions on the defect levels existing in bulk Si-doped n-GaAs was investigated by deeplevel transient spectroscopy. The concentrations of four electron traps at E c -0.36 eV (T 1 ), Ec -0.37 eV (T2), E c -0.55 eV (T3) and Ec-0.75 eV (T4) were found to be depe