Rapid dislocation-related D1-photoluminescence imaging of multicrystalline Si wafers at room temperature

✍ Scribed by Schmid, R. P. ;Mankovics, D. ;Arguirov, T. ;Ratzke, M. ;Mchedlidze, T. ;Kittler, M.

• Book ID: 105366205
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 334 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201026269

✦ Synopsis

Abstract

Here we report on a novel method, which allows rapid photoluminescence imaging of band‐to‐band and dislocation‐related radiation, D1, on multicrystalline silicon wafers at room temperature. We demonstrate spatially resolved 5.0 × 5.0 cm^2^ D1‐images, with a resolution of ∼120 µm, within a total recording time of 550 ms. The method provides homogeneous illumination over the whole sample area. Comparison with results from a conventional photoluminescence mapping technique demonstrates the potential of this new method for application as an in‐line wafer characterization technique.