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Raman, transmission electron microscopy, and conductivity measurements in molecular beam deposited microcrystalline Si and Ge: A comparative study

✍ Scribed by Gonzalez‐Hernandez, J.; Azarbayejani, G. H.; Tsu, R.; Pollak, F. H.

Book ID: 111688408
Publisher: American Institute of Physics
Year: 1985
Tongue: English
Weight: 528 KB
Volume: 47
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.96277

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