## Abstract ZnO nanostructures have attracted great attention for possible applications in optoelectronic and spintronic devices. The electrical resistivity because of carriers can be improved by the introduction of Li ions, as Li is a possible dopant for achieving pβtype ZnO. We have carried out a
Raman spectroscopy study of , , and crystals
β Scribed by Yunlong Cui; Utpal N. Roy; Pijush Bhattacharya; Adrian Parker; Arnold Burger; Jonathan T. Goldstein
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 449 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0038-1098
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β¦ Synopsis
AgGaSe 2 , AgGa 0.9 In 0.1 Se 2 , and AgGa 0.8 In 0.2 Se 2 single crystals grown by the horizontal Bridgman technique were studied utilizing Raman spectroscopy excited with 633-and 784-nm lasers at temperatures varied from 77 to 300 K. The resonant Raman scattering associated with a transition from the Ξ 6 (B) of the valence band to the conduction band Ξ 6 of AgGa 0.9 In 0.1 Se 2 crystal is demonstrated. Resonant enhancements of the longitudinal optical (LO) polar modes of Ξ 5 (or E) including Ξ 5L (W 4 ), Ξ 5L (W 3 ), Ξ 5L (X 5 ), and Ξ 5L (Ξ 15 ), and their overtones and combinations in the crystal at 77 K were observed.
π SIMILAR VOLUMES
Sulfamerazine (SMZ) Form I and II single crystals were prepared from aqueous dispersions of SMZ bulk samples and studied using several microscopic and spectroscopic techniques. Transmission light microscopy and Raman spectroscopy were used to observe and identify single crystals. The results indicat