Raman spectroscopic studies of PbxLa1−xTi1−x/4O3 thin films grown on Si substrates by RF magnetron sputtering

✍ Scribed by J.L. Zhu; W.L. Zhu; R.T. Li; W.Y. Ge; M. Jiang; J.G. Zhu; D.Q. Xiao; G. Pezzotti

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 476 KB
• Volume: 254
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2008.01.105

✦ Synopsis

A systematic spectroscopic investigation of Pb x La 1Àx Ti 1Àx/4 O 3 (PLT) thin films grown on PbO x /Pt/Ti/SiO 2 /Si substrate by RF magnetron sputtering was performed by using confocal Raman spectroscopy. Influence of the growth condition modification including different growth temperatures, with various buffer layer thickness, and post-annealing treatments were analyzed with taking advantages of the corresponding Raman spectral band variation in the respective process. Significant change in the spectral bands occurred with the alteration of the growth condition, and the related mechanisms were discussed after spectral deconvolution, providing reliable information about the direction for film growth.