## Abstract Nonpolar (11$ \bar 2 $0) __a__ βplane GaN thin films were grown on __r__ βplane (1$ \bar 1 $02) sapphire substrates by lowβpressure metal organic chemical vapor deposition (MOCVD). The stress characteristics of the __a__ βplane GaN films were investigated by means of polarized Raman sca
β¦ LIBER β¦
Raman scattering study of GaN films
β Scribed by Kirillov, Dimitry; Lee, Heon; Harris, James S.
- Book ID
- 121510692
- Publisher
- American Institute of Physics
- Year
- 1996
- Tongue
- English
- Weight
- 259 KB
- Volume
- 80
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.363367
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