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Raman scattering of amorphous carbon/semiconductor interface layers

✍ Scribed by M. Ramsteiner; J. Wagner; Ch. Wild; P. Koidl


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
334 KB
Volume
67
Category
Article
ISSN
0038-1098

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The broad bands at 1350 and 1550 cm-t observed m Raman scattermg from Ag m electrochemlcd cells have been observed on Ag surfaces m tunnchng structures and m uluah~gh vacuum. Both the shape and mtenslty of thus scattermg IS explamed b) the prescncc of amorphous carbon on the Ag surfaces The surface