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Raman scattering measurements on a floating water bridge

✍ Scribed by Ponterio, R C; Pochylski, M; Aliotta, F; Vasi, C; Fontanella, M E; Saija, F


Book ID
111915468
Publisher
Institute of Physics
Year
2010
Tongue
English
Weight
417 KB
Volume
43
Category
Article
ISSN
0022-3727

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We present in this paper Raman scattering measurements on a series of strained layer (InxGalxAS) (AIAs) multiple quantum wells (MQWs) in which the modest (x=O.04) indium concentration in the wells gives rise to a 0.3% strain between the alloy layers and the GaAs substrate. Comparison of the measure