Raman scattering measurements on InGaAs/AlAs strained MQWs

✍ Scribed by B. Samson; S.R.P. Smith; T. Dumelow; K.J. Moore; K. Woodbridge

• Book ID: 103918918
• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 308 KB
• Volume: 11
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(92)90197-d

✦ Synopsis

We present in this paper Raman scattering measurements on a series of strained layer (InxGalxAS) (AIAs) multiple quantum wells (MQWs) in which the modest (x=O.04) indium concentration in the wells gives rise to a 0.3% strain between the alloy layers and the GaAs substrate.

Comparison of the measured confined longitudinal optic (LO) mode frequencies with our model yields an effective interface broadening parameter W=I.2 in these samples. Results on a set of unstrained (GaAs) (AIAs) samples gives a similar interface width indicating that in these samples the incorporation of strain in the growth does not adversely effect the quality of the interfaces between the constituent superlattice materials.