Raman scattering in annealed isotopic (70Ge)n(74Ge)m superlattices
โ Scribed by E. Silveira; W. Dondl; G. Abstreiter; E.E. Haller
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 75 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
The pseudomorphic In x Ga 1 \_ x As/GaAs structures are of particular interest because of the high value of the In X Gal-x As electron mobility and the great conduction band offset leading to good electron confinement at the interface. Raman scattering experiments were carried out to measure the opt
Micro-Raman spectroscopy has been applied to isotopically pure Ga i N (i = 14, 15) epitaxial films in which structural disorder was introduced by ion implantation or mechanical damage. A pair of Raman peaks appearing at about 300 (300) and 667 (646) cm ยฑ ยฑ1 is consistent with the anion mass 14 (15)