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Raman and photoluminescence properties of Ge nanocrystals in silicon oxide matrix

✍ Scribed by Y.X Jie; A.T.S Wee; C.H.A Huan; W.X Sun; Z.X Shen; S.J Chua

Book ID
108214997
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
222 KB
Volume
107
Category
Article
ISSN
0921-5107

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Si nanocrystals (NCs) embedded in an SiC matrix were prepared by the deposition of Si-rich Si 1-x C x /SiC nanomultilayer films using magnetron sputtering, subsequently followed by thermal annealing in the range of 800 ∼ 1200 °C. As the annealing temperature increases to 1000 °C, Si NCs begin to for