Raman and IR-Reflectance Spectra of Porous III-V Semiconductor Structures
✍ Scribed by Sarua, A. ;G�rtner, G. ;Irmer, G. ;Monecke, J. ;Tiginyanu, I.M. ;Hartnagel, H.L.
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 135 KB
- Volume
- 182
- Category
- Article
- ISSN
- 0031-8965
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A parallel implementation of the selfconsistent-charge density-functional based tight-binding (SCC-DFTB) method is used to examine large scale structures in III ±V semiconductors. We firstly describe the parallel implementation of the method and its efficiency. We then turn to applications of the pa
## IR and Raman spectra of K,P,O1,Te(OH),2D,O and K,P,0,zTe(OH),2H,0 have been recorded and analysed. The P,O,, modes are assigned on the basis of characteristic vibrations of the POP and POz groups. The P,O:; ion has C,, symmetry and the P,O,, and TeO, groups coexist in this compound. Two crystal