Radio Frequency and Microwave Power Amplifiers, Volume 1: Principles, Device Modeling and Matching Networks

✍ Scribed by Andrei Grebennikov

• Publisher: Institution of Engineering & Technology
• Year: 2019
• Tongue: English
• Leaves: 582
• Series: Materials Circuits and Devices 71.1
• Category: Library

✦ Synopsis

Radio Frequency and Microwave Power Amplifiers are finding an increasingly broad range of applications, particularly in communications and broadcasting, but also in the industrial, medical, automotive, aviation, military, and sensing fields. Each application has its own design specifications, for example, high linearity in modern communication systems or high efficiency in broadcasting, and, depending on process technology, capability to operate efficiently at very high frequencies, such as 77 GHz and higher for automotive radars.
Advances in design methodologies have practical applications in improving gain, power output, bandwidth, power efficiency, linearity, input and output impedance matching, and heat dissipation. This essential reference presented in two volumes aims to provide comprehensive, state-ofthe-art coverage of RF and microwave power amplifier design with in-depth descriptions of current and potential future approaches. Volume 1 covers principles, device modeling and matching networks, while volume 2 focuses specifically on efficiency and linearity enhancement techniques. The volumes will be of particular interest to engineers and researchers engaged in RF and microwave amplifier design, and those who are interested in systems incorporating RF and microwave amplifiers.

✦ Table of Contents

Intro
Contents
Preface
List of contributors
1. Power amplifier design principles (Andrei Grebennikov)
1.1 Basic classes of operation: A, AB, B, and C
1.2 Load line and output impedance
1.3 Classes of operation based upon finite number of harmonics
1.4 Mixed-mode Class C and nonlinear effect of collector capacitance
1.5 Power gain and stability
1.6 Impedance matching
1.6.1 Basic principles
1.6.2 Matching with lumped elements
1.6.3 Matching with transmission lines
1.7 Push-pull and balanced power amplifiers
1.7.1 Basic push-pull configuration
1.7.2 Baluns 1.7.3 Balanced power amplifiers1.8 Transmission-line transformers and combiners
References
2. Nonlinear active device modeling (Iltcho Angelov and Mattias Thorsell)
2.1 Introduction: active devices
2.1.1 Semiconductor devices for PAs
2.1.2 GaAs FET and InP HEMT devices
2.1.3 GaN HEMT devices
2.1.4 CMOS devices
2.1.5 HBT devices
2.2 Sources of nonlinearity (Ids, various Gm, Rd, Rtherm, capacitances, breakdown)
2.3 Memory effects
2.4 Nonlinear characterization
2.4.1 Active load-pull
2.4.2 Fast active load-pull
2.4.3 Nonlinear characterization using active load-pull 2.5 Small/Large signal compact models2.5.1 Small-signal equivalent circuit models
2.5.2 Large-signal compact models
2.5.3 FET ECLSM model
2.6 The large-signal model extraction
2.6.1 Extraction of on-resistance (Ron)
2.6.2 Igs parameter extraction and fit
2.6.3 Drain Ids current extraction and fit
2.6.4 Ids parameter extraction model fit low Vds
2.6.5 Self-heating modeling thermal resistance Rtherm fit
2.7 Large signal FET equivalent circuit
2.8 Capacitances and capacitance models' implementation in simulators
2.9 GaN implementation specifics
2.10 Implementation of complex Gm shape 2.11 Breakdown phenomena2.12 Large-signal model evaluation: power-spectrum measurements and fit
2.13 LSVNA measurement and evaluation
2.14 Packaging effects
2.15 Self-heating modeling implementation GaN
Appendix
Acknowledgments
References
3. Load pull characterization (Christos Tsironis and Tudor Williams)
3.1 Definition of load pull
3.2 Scalar and vector load pull
3.3 Why is load pull needed?
3.4 Load pull methods
3.5 Reflection on a variable passive load
3.6 Injection of coherent (active) signal
3.6.1 The "split signal" method
3.6.2 The "active load" method 3.6.3 "Open loop" active injection3.6.4 "Hybrid" combination
3.7 Impedance tuners
3.7.1 Passive tuners
3.7.2 Electronic (passive) tuners
3.7.3 Wideband tuners
3.7.4 High power tuners
3.8 Harmonic load pull
3.8.1 Passive harmonic load pull using di-tri-plexers
3.8.2 Harmonic rejection tuners
3.8.3 Wideband multiharmonic tuners
3.8.4 Low frequency tuners
3.8.5 Special tuners
3.9 Fundamental versus harmonic load pull
3.10 On wafer integration
3.11 Base-band load pull
3.12 Advanced considerations on active tuning
3.12.1 Introduction
3.12.2 Closed loop (active load)