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Radiative transitions in P- and B-doped silicon nanocrystals

✍ Scribed by de Oliveira, E. L.; Albuquerque, E. L.; de Sousa, J. S.; Farias, G. A.

Book ID
125835881
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
310 KB
Volume
94
Category
Article
ISSN
0003-6951

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## Abstract We describe the impact of non‐radiative de‐excitation mechanisms on the optical emission from silicon nanocrystals formed in SiO~2~. Auger excitation via free carriers deliberately introduced through phosphorus ion implantation, shows a monotonic increase with increasing phosphorus conc