𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Observation of non-radiative de-excitation processes in silicon nanocrystals

✍ Scribed by Knights, A. P. ;Milgram, J. N. ;Wojcik, J. ;Mascher, P. ;Crowe, I. ;Sherliker, B. ;Halsall, M. P. ;Gwilliam, R. M.

Book ID
105365310
Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
247 KB
Volume
206
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

We describe the impact of non‐radiative de‐excitation mechanisms on the optical emission from silicon nanocrystals formed in SiO~2~. Auger excitation via free carriers deliberately introduced through phosphorus ion implantation, shows a monotonic increase with increasing phosphorus concentration which can be modelled adequately using a simple statistical approach. We also report a reduction in nanocrystal luminescence intensity with increasing exposure to UV radiation and suggest this phenomenon results from the introduction of non‐radiative defects in the Si/SiO~2~ network. The effect of UV radiation varies significantly depending on the sample preparation. (Β© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

πŸ“œ SIMILAR VOLUMES

Microscopic theory of erbium ion de-exci
Microscopic theory of erbium ion de-excitation processes in silicon
✍ A.A. Prokofiev; I.N. Yassievich; H. Vrielinck; T. Gregorkiewicz πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 174 KB

There are some evidences that Er related optically active centers in silicon form donors with binding energy about 150-250 meV, and the excitation of erbium occurs in a result of Auger recombination process of the electron bound to the donor and a free hole or bound exciton. It is supposed that ther