𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Radiative Recombination in Type II GaSb/GaAs Quantum Dots

✍ Scribed by H. Born; L. Müller-Kirsch; R. Heitz; A. Hoffmann; D. Bimberg

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
61 KB
Volume
228
Category
Article
ISSN
0370-1972

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Radiative lifetime of localized excitons
Radiative lifetime of localized excitons in GaAs quantum dots
✍ T. Kono; Y. Nagamune; M. Nishioka; Y. Arakawa 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 132 KB

We have investigated the exciton radiative lifetime in \(\mathrm{GaAs}\) quantum dots fabricated by metal organic chemical vapor selective growth technique. The radiative lifetime \(\tau_{\mathrm{r}}\) can be obtained from the results of photoluminescence(PL) and timeresolved PL measurements. At low

State Filling in Type II Quantum Dots
State Filling in Type II Quantum Dots
✍ L. Müller-Kirsch; A. Schliwa; O. Stier; R. Heitz; H. Kirmse; W. Neumann; D. Bimb 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 77 KB
Interface Effects in Type-II CdSe/BeTe Q
Interface Effects in Type-II CdSe/BeTe Quantum Dots
✍ T.V. Shubina; S.V. Ivanov; A.A. Toropov; S.V. Sorokin; A.V. Lebedev; R.N. Kyutt; 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 118 KB

We report on optical and structural studies of the interface symmetry in CdSe/BeTe multiple-layer structures containing self-assembled quantum dots. Temperature and decay behavior of the broad photoluminescence (PL) band is consistent with the type-II transitions involving deeply localized electron