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Interface Effects in Type-II CdSe/BeTe Quantum Dots

✍ Scribed by T.V. Shubina; S.V. Ivanov; A.A. Toropov; S.V. Sorokin; A.V. Lebedev; R.N. Kyutt; D.D. Solnyshkov; G.R. Pozina; J.P. Bergman; B. Monemar; M. Willander; A. Waag; G. Landwehr

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 118 KB
Volume: 229
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(200201)229:1<489::aid-pssb489>3.0.co;2-p

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✦ Synopsis

We report on optical and structural studies of the interface symmetry in CdSe/BeTe multiple-layer structures containing self-assembled quantum dots. Temperature and decay behavior of the broad photoluminescence (PL) band is consistent with the type-II transitions involving deeply localized electron states. Large linear in-plane polarization of the PL (up to 80%) is observed, implying the C 2v (or lower) symmetry of the individual places of the electron localization.

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