Radiative Recombination Effects in GaSb
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T. Deutsch; R. C. Ellis jr.; D. M. Warschauer
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Article
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1963
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John Wiley and Sons
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English
β 277 KB
## Abstract Forward biased GaSb diodes made by diffusing zinc into nβtype GaSb show emission lines at 0.72 eV or 0.78 eV at 77 Β°K. At current densities of approximately 60000 A cm^β2^ a diode showing a d.c. emission at 0.72 eV radiates mainly at 0.78 eV. Some narrowing of the 0.72 eV line has been