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Radiative recombination channels due to hydrogen in crystalline silicon

โœ Scribed by L.T. Canham; M.R. Dyball; W.Y. Leong; M.R. Houlton; A.G. Cullis; P.W. Smith


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
501 KB
Volume
4
Category
Article
ISSN
0921-5107

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Bulk non-radiative recombination reducti
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It is shown by microcathodoluminescence and electron beam induced current investigations that efficiency of radiative recombination and the values of hole diffusion lengths in nGaAs substrate increase (up t o L, -5 pm) due to an annealing under Ga-A1 melt. The values of the annealing critical temper